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| FDMA1023PZ Dual P-Channel PowerTrench(R) MOSFET March 2008 FDMA1023PZ Dual P-Channel PowerTrench(R) MOSFET -20V, -3.7A, 72m Features Max rDS(on) = 72m at VGS = -4.5V, ID = -3.7A Max rDS(on) = 95m at VGS = -2.5V, ID = -3.2A Max rDS(on) = 130m at VGS = -1.8V, ID = -2.0A Max rDS(on) = 195m at VGS = -1.5V, ID = -1.0A Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm HBM ESD protection level > 2kV typical (Note 3) RoHS Compliant tm General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Pin 1 S1 G1 D2 S1 D1 D2 G1 2 5 4 G2 1 6 D1 D2 3 MicroFET 2X2 D1 G2 S2 S2 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings -20 8 -3.7 -6 1.5 0.7 -55 to +150 Units V V A W C Thermal Characteristics RJA RJA RJA RJA Thermal Resistance for Single Operation, Junction to Ambient Thermal Resistance for Single Operation, Junction to Ambient Thermal Resistance for Dual Operation, Junction to Ambient Thermal Resistance for Dual Operation, Junction to Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 173 69 151 C/W Package Marking and Ordering Information Device Marking 023 Device FDMA1023PZ Package MicroFET 2X2 1 Reel Size 7" Tape Width 8mm Quantity 3000 units www.fairchildsemi.com (c)2008 Fairchild Semiconductor Corporation FDMA1023PZ Rev.C2 FDMA1023PZ Dual P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -16V, VGS = 0V VGS = 8V, VDS = 0V -20 -11 -1 10 V mV/C A A On Characteristics VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -4.5V, ID = -3.7A VGS = -2.5V, ID = -3.2A rDS(on) Static Drain to Source On-Resistance VGS = -1.8V, ID = -2.0A VGS = -1.5V, ID = -1.0A VGS = -4.5V, ID = -3.7A,TJ =125C gFS Forward Transconductance VDS = -5V, ID = -3.7A -0.4 -0.7 2.5 60 75 100 130 81 12 72 95 130 195 91 S m -1.0 V mV/C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10V, VGS = 0V, f = 1MHz 490 100 90 655 135 135 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VDD = -10V, ID = -3.7A VGS = -4.5V VDD = -10V, ID = -1A VGS = -4.5V, RGEN = 6 9 12 64 37 8.6 0.7 2.0 18 22 103 60 12 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -1.1A (Note 2) -0.8 32 15 -1.1 -1.2 48 23 A V ns nC IF = -3.7A, di/dt = 100A/s FDMA1023PZ Rev.C2 2 www.fairchildsemi.com FDMA1023PZ Dual P-Channel PowerTrench(R) MOSFET Notes: 1: RJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJCis guaranteed by design while RJA is determined by the user's board design. (a) RJA = 86C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB. For single operation. (b) RJA = 173C/W when mounted on a minimum pad of 2 oz copper. For single operation. (c) RJA = 69oC/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB, For dual operation. (d) RJA = 151oC/W when mounted on a minimum pad of 2 oz copper. For dual operation. a) 86oC/W when mounted on a 1 in2 pad of 2 oz copper. b) 173oC/W when mounted on a minimum pad of 2 oz copper. c) 69oC/W when mounted on a 1 in2 pad of 2 oz copper. d) 151oC/W when mounted on a minimum pad of 2 oz copper. 2: Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDMA1023PZ Rev.C2 3 www.fairchildsemi.com FDMA1023PZ Dual P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS = -1.8V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 -ID, DRAIN CURRENT (A) 2.6 VGS = -1.5V 5 4 3 2 1 0 0.0 VGS = -4.5V VGS = -3.0V VGS = -2.5V VGS = -2.0V VGS = -1.5V 2.2 VGS = -1.8V 1.8 1.4 1.0 VGS = -3.0V VGS = -2.0V VGS = -2.5V PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX VGS = -4.5V 0.6 0 1 2 3 4 -ID, DRAIN CURRENT(A) 5 6 0.5 1.0 1.5 2.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 200 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID = -3.7A VGS = -4.5V ID = -1.85A PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX 160 120 TJ = 125oC 80 TJ = 25oC -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 40 0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 6 Figure 3. Normalized On-Resistance vs Junction Temperature -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 10 VGS = 0V 6 5 4 3 2 1 TJ = -55oC TJ = 125oC TJ = 25oC PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX VDD= -5V -ID, DRAIN CURRENT (A) 1 TJ = 125oC 0.1 0.01 1E-3 1E-4 0.0 TJ = 25oC TJ = -55oC 0 0.0 0.5 1.0 1.5 -VGS, GATE TO SOURCE VOLTAGE (V) 2.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMA1023PZ Rev.C2 4 www.fairchildsemi.com FDMA1023PZ Dual P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 5 ID = -3.7A 1000 Ciss VDD = -5V 4 3 VDD = -10V CAPACITANCE (pF) 2 VDD = -15V Coss 100 f = 1MHz VGS = 0V 1 0 0 2 4 6 Qg, GATE CHARGE(nC) 8 10 Crss 40 0.1 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics 20 10 -ID, DRAIN CURRENT (A) Figure 8. Capacitance Characteristics 100 P(PK), PEAK TRANSIENT POWER (W) rDS(on) LIMIT VGS = -10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 - T A ---------------------125 TA = 25oC 100us 1ms 10ms VGS=-4.5V 1 10 I = I25 0.1 SINGLE PULSE R JA =173 o C/W TA = 25oC 100ms 1s 10s DC SINGLE PULSE o RJA = 173 C/W 1 0.5 -4 10 TA=25 C o SINGLE PULSE 0.01 0.1 1 10 60 10 -3 -VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 10 10 t, PULSE WIDTH (s) -2 -1 0 1 10 2 10 3 Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA -2 -1 0 1 2 3 0.01 0.005 -4 10 SINGLE PULSE 10 -3 10 10 10 10 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 11. Transient Thermal Response Curve FDMA1023PZ Rev.C2 5 www.fairchildsemi.com FDMA1023PZ Dual P-Channel PowerTrench(R) MOSFET Dimensional Outline and Pad Layout rev3 FDMA1023PZ Rev.C2 6 www.fairchildsemi.com FDMA1023PZ Dual P-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDMA1023PZ Rev.C2 7 www.fairchildsemi.com |
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